1 UI0008 n-ch 100v fast switching mosfets symbol parameter rating units v ds drain-source voltage 100 v v gs gate-sou r ce voltage 20 v i d @t c =25 continuous drain current, v gs @ 10v 1 5.4 a i d @t c =100 continuous drain current, v gs @ 10v 1 3.4 a i d @t a =25 continuous drain current, v gs @ 10v 1 1.7 a i d @t a =70 continuous drain current, v gs @ 10v 1 1.3 a i dm pulsed drain current 2 11 a p d @t c =25 total power dissipation 3 20.8 w p d @t a =25 total power dissipation 3 2 w t stg storage temperature range -55 to 150 t j operating junction temperature range -55 to 150 symbol parameter typ. max. unit r ja thermal resistance junction-ambient 1 --- 62 /w r jc thermal resistance junction-case 1 --- 6 /w id 100v 310m ? 5.4a the UI0008 is the highest performance trench n-ch mosfets with extreme high cell density , which provide excellent rdson and gate charge for most of the synchronous buck converter applications . the UI0008 meet the rohs and green product requirement with full function reliability approved. z advanced high cell density trench technology z super low gate charge z excellent cdv/dt effect decline z green device available general description features applications z high frequency point-of-load synchronous buck converter z networking dc-dc power system z power tool application absolute maximum ratings thermal data to251 pin configuration product summery bv dss r ds(on)
2 n-ch 100v fast switching mosfets symbol parameter conditions min. typ. max. unit bv dss drain-source breakdown voltage v gs =0v , i d =250ua 100 --- --- v bv dss / t j bvdss temperature coefficient reference to 25 , i d =1ma --- 0.0672 --- v/ r ds(on) static drain-source on-resistance 2 v gs =10v , i d =5a --- 260 310 m v gs =4.5v , i d =3a --- 270 320 v gs(th) gate threshold voltage v gs =v ds , i d =250ua 1.0 1.5 2.5 v v gs(th) v gs(th) temperature coefficient --- -4.12 --- mv/ i dss drain-source leakage current v ds =80v , v gs =0v , t j =25 --- --- 10 ua v ds =80v , v gs =0v , t j =55 --- --- 100 i gss gate-source leakage current v gs = 20v , v ds =0v --- --- 100 na gfs forward transconductance v ds =5v , i d =3a --- 5.4 --- s r g gate resistance v ds =0v , v gs =0v , f=1mhz --- 2.5 5 q g total gate charge (10v) v ds =80v , v gs =10v , i d =5a --- 9.6 13.4 nc q gs gate-source charge --- 1.83 2.56 q gd gate-drain charge --- 1.85 2.6 t d(on) turn-on delay time v dd =50v , v gs =10v , r g =3.3 i d =5a --- 1.4 2.8 ns t r rise time --- 30.6 55 t d(off) turn-off delay time --- 11.2 22 t f fall time --- 6 12 c iss input capacitance v ds =15v , v gs =0v , f=1mhz --- 508 711 pf c oss output capacitance --- 29 41 c rss reverse transfer capacitance --- 16.4 23 symbol parameter conditions min. typ. max. unit i s continuous source current 1,4 v g =v d =0v , force current --- --- 5.4 a i sm pulsed source current 2,4 --- --- 11 a v sd diode forward voltage 2 v gs =0v , i s =1a , t j =25 --- --- 1.2 v t rr reverse recovery time i f =5a , di/dt=100a/s , t j =25 --- 20 --- ns q rr reverse recovery charge --- 19 --- nc electrical characteristics (t j =25 , unless otherwise noted) diode characteristics note : 1.the data tested by surface mounted on a 1 inch 2 fr-4 board with 2oz copper. 2.the data tested by pulsed , pulse width Q 300us , duty cycle Q 2% 3.the power dissipation is limited by 150 junction temperature 4.the data is theoretically the same as i d and i dm , in real applications , should be limited by total power dissipation. UI0008
3 n-ch 100v fast switching mosfets 0.0 2.0 4.0 6.0 8.0 012345 v ds ,drain-to-source voltage (v) i d drain current (a) v gs =10v v gs =7v v gs =5v v gs =4.5v v gs =3v 0 0.5 1 1.5 0.00 0.25 0.50 0.75 1.00 v sd , source-to-drain voltage (v) i s source current(a) t j =150 t j =25 0.2 0.6 1 1.4 1.8 -50 0 50 100 150 t j ,junction temperature ( ) normalized v gs(th) (v) 0.5 1.0 1.5 2.0 2.5 -50 0 50 100 150 t j , junction temperature ( ) normalized on resistanc e typical characteristics fig.1 typical output characteristics fig.2 on-resistance vs. gate-source fig.3 forward characteristics of reverse fig.4 gate-charge characteristics fig.5 normalized v gs(th) vs. t j fig.6 normalized r dson vs. t j UI0008
4 n-ch 100v fast switching mosfets 10 100 1000 1 5 9 13172125 v ds drain to source voltage (v) capacitance (pf) f=1.0mhz ciss coss crss 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r jc ) 0.01 0.02 0.05 0.1 0.2 single p dm d = t on /t t jpeak = t c +p dm xr jc t on t duty=0.5 fig.8 safe operating area fig.9 normalized maximum transient thermal impedance fig.7 capacitance fig.10 switching time waveform fig.11 gate charge waveform UI0008
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